DB151S [BL Galaxy Electrical]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | DB151S |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
DB151S---DB157S
BL
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
SILICON BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
DB-S
Surge overload rating to 30 Amperes peak
Glass passivated chip junctions
1± 0.1
7.9± 0.2
6.4± 0.1
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
1.2± 0.3
10± 0.6
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
8.3± 0.1
5± 0.2
Plastic material has UL flammabilityclassification
94V-O
Polaritysymbols molded on body
Weight: 0.016 ounces,0.45 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.
DB
DB
DB
DB
DB
DB
DB
UNITS
151S 152S
153S 154S 155S 156S 157S
Maximum recurrent peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average f orw ard
100
1000
1.5
A
IF(AV)
Output current
@TA=25
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
IFSM
40
A
V
Maximum instantaneous f orw ard voltage
at 1.5 A
1.1
VF
IR
Maximum reverse current
@TA=25
10.0
1.0
μ
A
at rated DC blocking voltage @TA=100
Operating junction temperature range
Storage temperature range
m A
- 55 ---- + 150
TJ
TSTG
- 55 ---- + 150
www.galaxycn.com
BLGALAXY ELECTRICAL
1.
Document Number 0287004
RATINGS AND CHARACTERISTIC CURVES
DB151S---DB157S
FIG.2 -- MAXIMUM NON-REPETITIVE FORWARD SURGE
VVVVVVVCURRENT
FIG.1 -- TYPICAL FORWARD CURRENT DERATING CURVE
2.0
60
50
1.5
1.0
8.3ms Single Half Sine Wave
40
TJ=25
30
20
10
0
0.5
0
0
25
50
75
100
125
150
1
5
1 0
5 0
1 00
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT60HZ
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
100
1 0
10
1 .0
0 .1
1.0
TJ=25
0.1
.01
T =125
Pulse W idth
=300uS
J
.0 1
0 .4
0 .6
0 .8
1 .0
1 .2
1 .4
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
www.galaxycn.com
BLGALAXY ELECTRICAL
2.
Document Number 0287004
相关型号：
DB151S-T
Bridge Rectifier Diode, 1 Phase, 1.5A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN
RECTRON
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